Dr. Nur Zatil ‘Ismah Hashim

Infografik Nur Zatil Ismah Hashim 2022v31

Last Updated on 10.11.2022

Personal Info

PhD in Electrical & Electronics Engineering,
University of Southampton, Southampton, England, United Kingdom.

Master of Engineering (Microelectronics),
University of Sheffield, Sheffield, England, United Kingdom.

Tel    : +604  599 6034
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Researcher ID : F-6041-2019
ORCID : 0000-0002-3906-5704
Scopus ID : 55987575600
GoogleScholar ID : yxb08SEAAAAJ
USM Expertise Link : https://experts.usm.my/cvitae/zatil.hashim

Last Updated on 10.11.2022

Biography

Nur Zatil Ismah Hashim was born in Penang, Malaysia in 1986. She received the MEng. degree in Microelectronics from University of Sheffield, United Kingdom in 2010, and a PhD in Electrical and Electronics Engineering from University of Southampton, United Kingdom in 2015. Following that year, she joined School of Electrical and Electronic Engineering, Universiti Sains Malaysia as a Senior Lecturer.

She teaches several undergraduate courses such as Electronic Devices and Circuits and Analogue Electronics, as well as one postgraduate Master course entitled Semiconductor Devices and Solid-State Technology ever since she started working in USM.

Her current research interests include design, simulation, fabrication and characterisation of Si-based RF and low power devices, with particular interest in high resistivity silicon and nitride-based semiconductors

Specializations

  1. High resistivity silicon for RFICs
  2. Nitride-based semiconductors for low power device applications.
  3. CMOS fabrication and design processes.
  4. Failure analysis of IC packaging.

Selected Publications

  1. A.A.M. Amin, S.M. Said, M.F.M. Salleh, A.M. Afifi, N.M.J.N. Ibrahim, M.M.I.M. Hasnan, M. Tahir, N.Z.I. Hashim, “Review of Fe-based spin crossover metal complexes in multiscale device architectures,” in Inorganica Chimica Acta, vol. 544, pp. 121168, 2023.
  2. N. Ghazali, N.Z.I. Hashim, “Hold violation fix with physical awareness to minimize impact on congestion,” in Lecture Notes in Electrical Engineering. Singapore: Springer, 2022.
  3. S. Mansor; N.S.Moh Nazar; N.Z.I. Hashim; D. Ishak; M. Jaafar Mustapha; M. K. Mohd Jamil; H. S. Abd Halim; A. B. Abd Ghani,”Electrical treeing characteristics of XLPE material containing alumina nano-filler,” in Lecture Notes in Electrical Engineering. Singapore: Springer, 2022.
  4. Mohd Noh and N.Z.I. Hashim, Electronic Devices and Circuits. Penerbit USM, 2021.
  5. S. Mansor, N.S. Moh Nazar, M. A. Azmi, N.Z.I. Hashim, D. Ishak, M. Jaafar, H.S. Abd. Halim, A.B. Abd Ghani and M.K. Mohd Jamil, “Effect of ZnO nanofiller in the XLPE matrix on electrical tree characteristics,” IEEE Access, vol. 8, pp. 117574-117581, 2020.
  6. Nabet, M. Rack, N.Z.I. Hashim, C.H. de Groot and J-.P. Raskin, “Behavior of gold-doped silicon substrate under small- and large-RF signal,” Solid-State Electronics, vol. 168, no. 107718, 2020.
  7. N.N. Zaharim, N.Z.I. Hashim, M.F. Packeer Mohamed, A.A. Manaf and M.A. Md Zawawi, “Physical modelling of gallium nitride (GaN) based double barrier quantum well device,” in Lecture Notes in Electrical Engineering. Singapore: Springer, 2019, vol. 547, pp. 141-148.
  8. S.K. Lee, M.F. Packeer Mohamed, M.A. Md. Zawawi and N.Z.I. Hashim, “Place and route optimization for high coverage multi-corner multi-mode timing fix,” in Lecture Notes in Electrical Engineering. Singapore: Springer, 2019, vol. 547, pp. 195-202.
  9. Bakaimi, X. He, S. Guerin, N.Z.I. HashimQ. Luo,   I.M. ReaneyS. Gao, B.E. Hayden   and  C. H. de Groot, “Combinatorial synthesis and screening of (Ba,Sr)(Ti,Mn)O3 thin films for optimization of tunable co-planar waveguides,” Journal of Materials Chemistry C, vol. 6, pp. 6222-6228, 2018.
  10. F. Packeer Mohamed, M.A. Md Zawawi , N.Z.I Hashim, N.M. Noh , W.M. Jubadi and M. Missous, “Alternative spin-on-glass (SoG) material characterization for deep-submicron (<0.35 um) soft reflow fabrication process,” in 2018 IOP Conf. Ser.: Mater. Sci. Eng., Langkawi, Malaysia, vol. 380, 012005.
  11. Z. Hashim, C.H. de Groot, “Gold-compensated high resistivity silicon as low-loss microwave substrates,” in Australian Microwave Symposium, Brisbane, Australia, 2018, pp. 37-38.
  12. Mallik, A. Abuelgasim, N.Z.I. Hashim, P. Ashburn and C.H. de Groot, “Analytical and numerical model of spiral inductors on high resistivity silicon substrates,” Solid-State Electronics, vol. 93, pp. 43 – 48, 2014.
  13. Z.I. Hashim, A. Abuelgasim and C.H. de Groot., “Suppression of parasitic surface conduction in Au-compensated high resistivity silicon for 40-GHz RF-MMIC application,” in 2014 Asia-Pacifific Microwave Conference (APMC), Sendai, Japan, 2014.
  14. Abuelgasim, N.Z.I. Hashim, H.M.C. Chong, P. Ashburn, C.H. De Groot, “Low loss 67-GHz coplanar waveguides and spiral inductors on 100 kΩcm gold-doped high resistivity Cz-Silicon,” in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Newport Beach, California, USA, 2014.
  15. Z.I. Hashim, A. Abuelgasim and C.H. de Groot., “Coplanar waveguides on gold-doped high resistivity silicon for 67-GHz microwave application,” in 2013 IEEE International RF and Microwave Conference (RFM), Penang, Malaysia, 2013.

Grants

National

  1. Surface passivation mechanism in gold-compensated high resistivity silicon using physical-vapour-deposited aluminium nitride for RF-integrated CMOS application.

Amount: RM118300.00
Status: Active (01.11.2020 - 31.10.2023)
Role: Principal Investigator

  1. The mechanism of charge transfer for dual-gate SiNW sensors fabricated by atomic force microscope lithography for heavy metal detection

Amount: RM106500.00
Status: Completed (01.01.2019 - 31.12.2021)
Role: Co-Investigator

University

  1. Development of gold-compensated high resistivity silicon as low loss microwave substrates

Amount: RM34400.00
Status: Completed (01.08.2017 - 31.01.2020)
Role: Principal Investigator

  1. Elucidation and experimentation of current collapse mechanism in GaN-based high electron mobility transistor (HEMT) power switches reliability for efficient energy management in green car technology

Amount: RM70000.00
Status: Active (01.09.2020 - 31.07.2023)
Role: Co-Investigator

  1. Epitaxial and Electrical Optimization of GaN based Resonant Tunneling Diodes through Physical Simulation

Amount: RM94670.00
Status: Completed (01.05.2018 - 31.01.2021)
Role: Co-Investigator