Dr. Mohamed Fauzi Packeer Mohamed

Infografik Mohamed Fauzi Packeer Mohamed 2020 V2

Last Updated on 06.05.2020

Personal Info

Ph.D in Electrical & Electronics Engineering (Microelectronic and Nanostructures),
University of Manchester, Manchester, England, United Kingdom.

Master of Science (Electronics System Design Engineering),
Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang.

Bachelor of Engineering (Electrical & Electronics),
Universiti Tenaga Nasional, Kajang, Selangor.

Tel:  +604 5996097
Fax: +604 5996909
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Researcher Identifiers
Researcher ID : T-1442-2019
ORCID : 0000-0001-6353-0285
Scopus Author ID: 
Google Scholar ID: 

Last Updated on 06.05.2020

Biography

Mohamed Fauzi Packeer Mohamed was born in Kuala Lumpur, Malaysia in 1978. He received the B.Eng. degree in electrical and electronics engineering (with distinction) from the Universiti Tenaga Nasional (UNITEN) Kajang, Selangor, Malaysia in 2002, the M.Sc. degree in electronics system design engineering from the Universiti Sains Malaysia (USM), Nibong Tebal, Pulau Pinang in 2010, and Ph.D. degree in electrical and electronics engineering from The University of Manchester (UoM), Manchester, United Kingdom in 2015.

In 2015, he joined the School of Electrical and Electronics Engineering, Universiti Sains Malaysia (USM), as a Senior Lecturer. He has 7 years industrial experiences back from 2002 to 2009 in semiconductor wafer fabrication and packaging prior joining the university as lecturer. His current research interests include simulation, design, fabrication and characterization of high RF and high power devices based on compound semiconductor materials, for 5G and Green Energy applications. He had graduated one PhD student and 6 MSc students. Currently he is supervising 3 MSc students as main supervisor and one PhD student as co-supervisor.

Part from teaching and research in university, he is also a teaching consultant and trainer in Surface Mount Technology (SMT) Industry nationally and internationally.     

As for the professional society, he is a member of IEEE Electron Devices Society (IEEE EDS), IEEE Circuits and Systems Society (IEEE CAS), and registered graduate member of Board of Engineers Malaysia (BEM).

Last Updated on 22.10.2019

Specializations

  1. III-V and III-Nitride compound semiconductor transistors (Indium Phosphate, InP and Gallium Nitride, GaN based devices).
  • Micro & Nano device: design, modeling, simulation, fabrication and characterization.
  • Monolithic Microwave Integrated Circuit (MMIC): design, modeling, fabrication and characterization.
  1. CMOS wafer fabrication process (Lithography and Etch) and packaging.
  2. CMOS Analog and RF IC design.

Last Updated on 22.10.2019

Research Interest

  1. Gallium Nitride High Electron Mobility Transistor (GaN HEMT)
  • Design, modeling, simulation and fabrication for high power devices and MMIC circuit for green and renewable technology.
  • Design, modeling, simulation and fabrication for high frequency devices and MMIC circuit for 5G technology.
  • Design, modeling, simulation and fabrication for sensor application.
  1. III-V High Electron Mobility Transistor (InP based pHEMT)
  • Design, modeling, simulation and fabrication for high frequency devices and MMIC circuit for 5G technology.
  1. Field Effect Transistor (FET) Technology
  • Design, modeling, simulation and fabrication for bio-sensor applications.
  • Design, modeling, simulation and fabrication Flexible Thin Film Transistor for wearable applications.
  1. RF IC Design

Last Updated on 22.10.2019

Selected Publications


BOOK CHAPTER

  1. Zaharim W.N.N., Hashim N.Z.I., Packeer Mohamed M.F., Manaf A.A., Zawawi M.A.M. (2019) Physical Modelling of Gallium Nitride (GaN) Based Double Barrier Quantum Well Device. In: Zawawi M., Teoh S., Abdullah N., Mohd Sazali M. (eds) 10th International Conference on Robotics, Vision, Signal Processing and Power Applications. Lecture Notes in Electrical Engineering, vol 547. Springer, Singapore
  1. Lee J.S.K., Packeer Mohamed M.F., Md. Zawawi M.A., Hashim N.Z.I. (2019) Place and Route Optimization for High Coverage Multi-corner Multi-mode Timing Fix. In: Zawawi M., Teoh S., Abdullah N., Mohd Sazali M. (eds) 10th International Conference on Robotics, Vision, Signal Processing and Power Applications. Lecture Notes in Electrical Engineering, vol 547. Springer, Singapore

JOURNAL

  1. Nur Syahadah Yusof, Norlaili Mohd Noh, Jagadheswaran Rajendran, Asrulnizam Abd Manaf, Shukri Korakkottil Kunhi Mohd, Yusman Mohd. Yusof, Harikrishnan Ramiah, Mohamed Fauzi Packeer Mohamed “Electronic controlled CMOS inductor with patterned metal ground shields for fine inductance tuning application” in Indonesian Journal of Electrical Engineering and Computer Science, 14, No. 2, May 2019, pp. 937~948 ISSN: 2502-4752, DOI: 10.11591/ijeecs.v14.i2.pp937-948 (2019). SJR 0.18 

  2. Abdurrahman Javid Shaikh, Fauzi Packeer, MirzaMuhammad Ali Baig, Othman Sidek “A full 3D model of the modulation efficiency of a submicron complementary metal–oxide–semiconductor (CMOS)‑compatible interleaved‑junction optical phase shifter” in Springer: Journal of Computational Electronics, https://doi.org/10.1007/s10825-019-01366-8 (2019). Impact Factor 1.637

  3. Eng Keong The, Mohamad Adzhar Md Zawawi, Mohamed Fauzi Packeer Mohamed, Nor Ashidi Mat Isa “Practical System-on-Chip Repeater Design With Hybrid Meta-Heuristic Techniques” in IEEE Access, Vol. 6, pp 46334-46345, ISSN: 2169-3536, DOI: 10.1109/ACCESS.2018.2866394 (2018). Impact Factor 3.557

  4. Asmaa Nur Aqilah Zainal Badri, Norlaili Mohd Noh, Shukri bin Korakkottil Kunhi Mohd, Asrulnizam Abd Manaf, Arjuna Marzuki, Mohd Tafir Mustaffa, Mohamed Fauzi Packeer Mohamed “Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application” in Indonesian Journal of Electrical Engineering and Computer Science, 10, No. 3, June 2018, pp. 925~933 ISSN: 2502-4752, DOI: 10.11591/ijeecs.v10.pp925-933 (2018). SJR 0.18

  5. M. Jubadi, F. Packeer, M. Missous Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier” in International Journal of Electrical and Computer Engineering (IJECE) Vol. 7, No. 6, December 2017, pp. 3002~3009 ISSN: 2088-8708, DOI: 10.11591/ijece.v7i6.pp3002-3009 (2017). SJR 0.3

  6. Abdurrahman Javid Shaikh, Othman Sidek, Fauzi Packeer “Self phase modulation and cross phase modulation in nonlinear silicon waveguides for on-chip optical networks—A tutorial” in Elsevier: Nano Communication Networks 14 (2017) 60–67, http://dx.doi.org/10.1016/j.nancom.2017.06.001 (2017). Impact Factor 2.07

  7. M. Mohamad Isa, N. Ahmad F. Packeer and M. Missous, “Optimization of Gate Recess Step and Elimination of the Dome Effect for Highly Reliable and Reproducible Novel pHEMT Device” in The Journal of Engineering and Technology (JET) by Malaysian Technical Universities Network (MTUN) : VOL 6, NO 1 (2015): Electrical and Electronic Engineering.

  8. F. Packeer, M. Mohamad Isa, W Mat Jubadi, K W Ian and M. Missous “Fabrication and Characterization of Tensile In0.3Al0.7As Barrier and Compressive In0.7Ga0.3As Channel pHEMTs Having Extremely Low Gate Leakage for Low Noise Applications” in IOP Journal of Physic D: Applied Physics, J.Phys. D: Appl. Phys. 46 (2013) 264002 (7pp). Impact Factor 2.373
    (Selected for special news in “Semiconductor Today” magazine on 3rd July 2013)

CONFERENCE

  1. F Packeer, M A M Zawawi, N Z I Hashim, N M Noh, W M Jubadi, M Missous “Alternative Spin-On-Glass (SoG) Material Characterization For Deep-Submicron (<0.35 um) Soft Reflow Fabrication Process” in The 6th International Conference on Nanomaterials and Materials Engineering (ICNME 2018), Langkawi, Malaysia, 23rd to 25th March 2018. (Best Presenter Award).
  1. Asmaa Nur Aqilah Zainal Badri, Norlaili Mohd Noh, Shukri bin Korakkottil Kunhi Mohd, Asrulnizam Abd Manaf, Arjuna Marzuki, Mohd Tafir Mustaffa, Mohamed Fauzi Packeer Mohamed “Development of accurate BSIM4 noise parameters for CMOS 0.13-µm transistors in below 3-GHz LNA Application” in International Conference on Electrical, Electronic, Communication and Control Engineering (ICEECC 2017), Universiti Teknologi Malaysia (UTM), 5th & 6th December 2017.
  1. Abdurrahman Javid Shaikh, Othman Sidek, Fauzi Packeer “Analysis and Design of High Mode Power, Single Mode, Submicron SOI Rib Waveguides” presented in International Conference on Computing, Electrical & Electronic Engineering (ICCEEE 2017), Karachi Pakistan, 2nd & 3rd August 2017.
  1. M. Mohamad Isa, N. Ahmad, F. Packeer, and M. Missous “Optimization of Gate Recess Step and Elimination of the Dome Effect for Highly Reliable and Reproducible Novel pHEMT Device” in Malaysian Technical Universities Conference on Engineering & Technology, MUCET 2014, Universiti Teknikal Malaysia, 10 November 2014.
    (Best Overall Paper Award and the Best Paper Award in the category of Electronic and Electrical Engineering). 
  1. F. Packeer, Warsuzarina Mat Jubadi and M. Missous “New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low Noise Applications” in UK Semiconductor 2014 Conference, Sheffield Hallam University, 9 July 2014.
  1. W. M. Jubadi, F.Packeer, K.W.Ian and M.Missous “Optimization of Two Dimensional and Empirical Modelling of 0.25 µm In0.7Ga0.3As/In0.3Al0.7As pHEMT Device for X-band MMIC Low Noise Amplifier” in UK Semiconductor 2014 Conference, Sheffield Hallam University, 9 July 2014.
  1. F. Packeer, K W Ian, James Sexton and M. Missous “Spin-on-Glass (SoG) Material Characterization For Deep-Submicron (<0.35 µM) Soft Reflow Fabrication Process” in UK Semiconductor 2013 Conference, The University of Sheffield, 4 July 2013.
  1. F. Packeer, M. Mohamad Isa and M. Missous “Fabrication and Characterization of Tensile In0.3Al0.7As Barrier and Compressive In0.7Ga0.3As Channel pHEMTs Having Extremely Low Gate Leakage for Low Noise Applications” in Postgraduate Poster Conference and Industrial Advisory Group Meeting, Manchester, 22 November 2012.
  1. F. Packeer, M. Mohamad Isa and M. Missous “Fabrication and Characterization of Tensile In0.3Al0.7As Barrier and Compressive In0.7Ga0.3As Channel pHEMTs Having Extremely Low Gate Leakage for Low Noise Applications” in UK Semiconductor 2012 Conference, The University of Sheffield, 5 July 2012.

Last Updated on 22.10.2019

Grants


National

  1. Elucidation of the Charge Transport Mechanism in Perovskite Solar Cells with Zinc Oxide Quantum Dots Employed as Electron Transport Material.
    Amount: RM125,000.00
    Status: Active (01.01.2019 - 31.12.2021)
    Role: Co-researcher
    Source:

University

  1. Epitaxial and Electrical Optomization of GaN based Resonant Tunneling Diodes through Physical Simulation.
    Amount: RM94,670.00
    Status: Active (01.05.2018 - 30.04.2020)
    Role: Co-researcher
    Source:

  2. PHEMT Quantum Well Engineering Through Physical Simulation for Ultra-Fast and High Breakdown Electronics.
    Amount: RM34,580.00
    Status: Active (01.08.2017 - 31.01.2020)
    Role: Principal Investigator
    Source:

  3. Empirical Simulation Through DC Characterization of the Resonant Tunneling Diode for Application in Ultra High Frequency Electronics.
    Amount: RM34,580.00
    Status: Active (01.10.2016 - 30.03.2019)
    Role: Co-researcher
    Source:

Last Updated on 22.10.2019

Postgraduate Opportunities

I’m looking for prospective Master and PhD students who are interested in the research of:

  • Gallium Nitride High Electron Mobility Transistor (GaN HEMT)
  • III-V High Electron Mobility Transistor (InP based pHEMT)
  • Field Effect Transistor (FET) technology
  • Flexible Thin Film Transistor for wearable technology
  • RF IC Design

Note:

The device simulation and modeling will be using Silvaco, COMSOL or other related TCAD software. While for IC Design will be using CADENCE and other related EDA software. Research allowances are available and can be considered for suitable candidate through research grant or university fellowship.

If interested, please send an email with your latest CV to Alamat emel ini dilindungi dari Spambot. Anda perlu hidupkan JavaScript untuk melihatnya.

Last Updated on 22.10.2019